“These new SiC MOSFETs provide power converter designers with a state-of-the-art alternative to traditional silicon-based transistors,” said Michael Ketterer, product marketing manager for Power Semiconductors at Littelfuse. Renewable energy (e.g., solar inverters).Typical applications for these new SiC MOSFETs include: They also offer a combination of high operating voltages and ultra-fast switching that traditional power transistor solutions such as silicon IGBTs with similar current ratings and packages can’t match.

These SiC MOSFETs are designed for use as power semiconductor switches in a wide range of various power conversion systems, outperforming their silicon MOSFET counterparts substantially in terms of blocking voltage, specific-on resistance, and junction capacitances. The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer ultra-low on-resistance (RDS(ON)) levels of just 120 milliohms and 160 milliohms respectively. The announcement was made in the Littelfuse booth at the Applied Power Electronics Conference & Exposition (APEC 2018). These new SiC MOSFETs are the latest products of a strategic partnership that Littelfuse formed with Monolith in 2015 to develop power semiconductors for industrial and automotive markets. Designed to outperform silicon MOSFETs and IGBTs for ultra-fast switching in power conversion systemsĬHICAGO, March, 2018 – Littelfuse, Inc. the global leader in circuit protection, and Monolith Semiconductor Inc., a Texas-based company developing silicon carbide technology, today added two 1200V silicon carbide (SiC) n channel, enhancement-mode MOSFETs to their expanding first-generation portfolio of power semiconductor devices.

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